g-tensor Optimization in Germanium-Silicon Quantum Dots for Scalable Hole-Spin Qubits

Targeted silicon incorporation in Ge/SiGe heterostructures optimizes g-tensor properties for reliable hole-spin qubit operations, achieving two-orders-of-magnitude suppression while maintaining quantum dot confinement through engineered vertical potential profiles.

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https://iq.fp2.dev/eYymr