Strain Effects and Dark States in Silicon-Vacancy Diamond Spectroscopy

Computational modeling reveals how strain variations in silicon-vacancy centers cause dramatic differences in spectral signatures between detection methods, with a characteristic axial strain of 2.8×10⁻⁴. Findings suggest high-strain centers decouple from optical emission, rel...

#QuantumSensing #DiamondQubits #Research #Informaq

https://iq.fp2.dev/PHaPW